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SGF23N60UF - Discrete, High Performance IGBT Ultra-Fast IGBT

SGF23N60UF_309136.PDF Datasheet


 Full text search : Discrete, High Performance IGBT Ultra-Fast IGBT


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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
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HP[Agilent(Hewlett-Packard)]
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SGF23N60UF uncooled cel SGF23N60UF FRE DOUNLODE SGF23N60UF Cycle SGF23N60UF Register SGF23N60UF Vbe(on)
SGF23N60UF samsung SGF23N60UF optical SGF23N60UF samsung SGF23N60UF Rectifier SGF23N60UF frequency
 

 

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